channel doping meaning in Chinese
沟道掺杂
Examples
- Influences of the parameters on device performance such as thickness of strained si , ge content , channel doping and thickness of buried oxide are discussed based on given models . the models could be very helpful for device design
根据所建立的模型,针对硅膜厚度、 ge组分、掺杂浓度和埋氧层厚度等参量对薄膜全耗尽型strained - soimosfet器件性能的影响进行详细讨论,为器件结构设计提供了理论基础。 - Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基于流体动力学能量输运模型，对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件，且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同，界面态引起的器件特性的退化不同.沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大